In spite of selenide semiconductors having a wide application area, TlCu2 Se2 (TCSe) is poorly studied and its synthesis by non-vacuum or thermic methodology in film form is non-existent. Generally, the main problems of applying these TCSe compounds are related to complicated single phase growth, and the great time consuming and non-scalable fabrication method. In this work, the facile, fast, scalable and new electrochemical deposition of this material was proposed as a workaround for these main problems and obtaining single phase thin film. Thus, the electrodeposited Tlx Cu3 - x Se2 films were characterized by scanning electron microscopy, X-ray diffraction (with Rietveld refinement) and energy dispersive X-ray spectroscopy. They showed interesting variation of composition (x =1.1, 1.2, and 1.25) and morphology as function of the electrodeposition potential, electrolytic bath temperature and thermal treatment.

Nesse trabalho foram obtidos eletrodepósitos de filmes finos de ZnTe sobre substrato de Pt, usando pulsos potenciotásticos. A influência do número de pulsos, tempo de deposição para cada elemento (Zn ou Te) e a ordem de deposição das camadas (Zn/Te ou Te/Zn) na morfologia, propriedades ópticas e na foto-corrente foi avaliada. Os dados de microanálise mostraram que a razão Zn/Te variou entre 0,12 e 0,30 sendo que o filme não era estequiométrico. Entretanto, o valor de energia da banda proibida obtido, em todas as condições experimentais utilizadas neste trabalho, foi de 2,28 eV, indicando a formação do filme de ZnTe. As amsotras com maior porcentagem de Zn apresentaram maior fotocorrente, a qual foi da ordem de 2,64 µA cm-2 e uma morfologia do tipo dendrítica.

In this work, the ZnTe thin films were electrodeposited using potentiostatic steps, on Pt substrate. The effect of steps number, the deposition time for each element (Zn or Te) and layer order (Zn/Te or Te/Zn) in the morphology, composition, band gap energy and photocurrent was evaluated. Microanalysis data showed that the ratio Zn/Te ranged from 0.12 and 0.30 and the film was not stoichiometric. However, the band-gap value obtained from in all experimental conditions used in this work was 2.28 eV, indicating film growth of ZnTe. The samples with higher Zn showed higher photocurrent, which was of the order of 2.64 µA cm-2 and dendritic morphology.